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| Product Description Stanford Microdevices' SHF-0198 series is a high performance AlGaAs/GaAs Heterostructure FET housed in a low-cost stripline-mount ceramic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power-added efficiency and improved linearity. Output power at 1dB compression for the SHF-0198 is +27dBm when biased for Class A operation at 9V and 150mA. This HFET is also characterized at 5V for lower voltage applications. This device can be used in both analog and digital wireless communication infrastructure and subscriber equipment including cellular, PCS, CDPD, wireless data and pagers. SHF-0198 DC-12 GHz, 0.5 Watt AIGaAs/GaAs HFET Product Features * Patented AIGaAs/GaAs Heterostructure FET Technology Output Power vs. Frequency 30 28 * +27dBm Output Power at 1dB Compression * +38 dBm Output IP3 * High Power Added Efficiency - up to 40% at Class A High Power GaAs FETs dBm 26 24 DC 2 4 6 8 10 12 * 17dB Gain @ 900 MHz, 14dB Gain @ 1.9GHz Applications * AMPS, PCS Basestations * VSAT GHz Electrical Specifications at Ta = 25C Sym bol Gp P a r a m e te r s : T e s t C o n d itio n s P o w e r G a in f= f= f= C o m p r e s s io n f= f= f= f= f= f= f= f= f= 0 .9 G H z 1 .9 G H z 2 .5 G H z 0 .9 G H z 1 .9 G H z 2 .5 G H z 0 .9 G H z 1 .9 G H z 2 .5 G H z 0 .9 G H z 1 .9 G H z 2 .5 G H z U n its dB dB dB dB dB dB dB dB dB dB dB dB mA M in . 15 12 Ty p . 17 14 12 + 2 7 .5 + 2 7 .3 + 2 7 .0 +38 +38 +37 1 .8 2 .2 2 .5 300 M ax. P1dB O u tp u t P o s e r a t 1 d B + 2 6 .5 + 2 6 .3 IP 3 O u tp u t T h ir d O r d e r I n te r c e p t P o in t N Fopt N o is e F ig u r e Id s s Gm Vp Vbgs Vbgd S a tu ra te d Vgs = 0V D r a in C u r r e n t: V d s = 3 V , T ra n s c o n d u c ta n c e : V d s = 3 V , V g s = 0 V P in c h - o ff V o lta g e : V d s = 3 V , Id s = 1 m A G a te - to - S o u r c e B r e a k d o w n V o lta g e G a t e - t o - D r a in B r e a k d o w n V o lt a g e mS V V V 175 -2 .2 -2 0 -2 0 -1 2 -1 2 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 3-21 SHF-0198 DC-12 GHz 0.5 Watt HFET Typical Performance at 25 C (Vds = 9V, Ids = 150mA) |S11| vs. Frequency 0 -5 |S21| and MAG vs. Frequency 30 25 20 15 10 5 0 DC 2 4 6 dB -10 -15 -20 DC 2 4 6 8 10 12 dB M AG S21 8 10 12 GHz GHz |S12| vs. Frequency 0 -20 0 -5 |S22| vs. Frequency dB -40 -60 DC 2 4 6 8 10 12 dB -10 -15 -20 0 2 4 6 8 10 12 High Power GaAs FETs GHz GHz TOIP vs. Frequency 39 38 dBm 37 36 35 34 0 2 4 6 8 10 12 GHz Typical S-Parameters Vds = 9.0V, Id = 150mA Freq G H z .1 0 0 .5 0 0 1 .0 0 2 .0 0 3 .0 0 4 .0 0 5 .0 0 6 .0 0 7 .0 0 8 .0 0 9 .0 0 1 0 .0 0 1 1 .0 0 1 2 .0 0 |S 1 1 | S 11 A ng |S 2 1 | S21 A ng |S 1 2 | S12 A ng |S 2 2 | S22 A ng 0 .8 9 1 0 .9 2 8 0 .8 8 8 0 .8 0 4 0 .8 1 3 0 .8 0 4 0 .8 4 6 0 .9 1 4 0 .9 1 7 0 .9 2 6 0 .9 6 7 0 .9 7 0 0 .9 3 7 0 .9 0 6 -1 2 -6 4 -9 7 -1 3 8 -1 6 7 172 155 137 11 9 101 87 65 54 21 1 1 .8 2 1 0 .8 4 9 .4 4 7 .9 4 5 .6 9 3 .9 8 2 .7 6 2 .0 2 1 .6 6 1 .4 5 1 .3 7 1 .3 3 1 .3 8 1 .3 3 177 150 122 97 70 52 35 20 -1 -4 -11 -3 4 -3 1 -3 8 .0 0 5 .0 2 3 .0 3 7 .0 4 3 .0 4 9 .0 5 3 .0 7 4 .0 9 2 .1 3 7 .1 1 5 .2 0 5 .1 6 7 .1 8 6 .2 0 7 89 70 63 47 44 60 65 69 58 60 56 41 42 39 .5 3 9 .5 2 9 .4 7 7 .4 6 8 .4 9 3 .5 3 1 .6 0 3 .6 7 0 .8 2 2 .8 0 2 .9 4 2 .9 4 7 .9 5 2 .8 7 9 -4 -2 7 -4 8 -7 4 -1 0 3 -1 2 3 -1 4 5 -1 5 9 147 148 132 100 89 51 (S-Parameters include the effects of two 1.0 mil diameter bond wires, each 30 mils long, connected to the gate and drain pads on the die) 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 3-22 SHF-0198 DC-12 GHz 0.5 Watt HFET Absolute Maximum Ratings Parameter Symbol Absolute Maximum Part Number Ordering Information Part Number SHF-0198 Devices Per Tray 100 Drain to Source Voltage Gate to Source Voltage Drain Current RF Input Power Channel Temperature Storage Temperature Thermal Resistance, JunctionGround Lead VDS VGS IDS PIN TCH TSTG RIN +10V -5V IDSS 100 mW 175 C -65 to +175 C 36 degC/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Mounting Surface Temperature = 25 C High Power GaAs FETs Outline Drawing Pin Designation 1 2 3 Gate Source Drain 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 3-23 |
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